Properties of ZnSe nanocrystalline thin films prepared by thermal evaporation
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چکیده
منابع مشابه
Electronic state characterization of SiOx thin films prepared by evaporation
SiOx thin films with different stoichiometries from SiO1.3 to SiO1.8 have been prepared by evaporation of silicon monoxide in vacuum or under well-controlled partial pressures of oxygen sP,10−6 Torrd. These thin films have been characterized by x-ray photoemission and x-ray-absorption spectroscopies, this latter at the Si K and L2,3 absorption edges. It has been found that the films prepared in...
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WO3 and NiO-WO3 thin films of various thicknesses were deposited on an Al2O3-Si (alumina-silicon) substrate using high vacuum thermal evaporation. After annealing at 500C for 30 minutes in air, the crystallanity and surface morphology of WO3 and NiO-WO3 thin films were investigated using X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). It is observed that the WO3 thin films were ...
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Vacuum evaporated films of GexSe80-xPb20 have been characterized by using optical spectroscopy (especially transmission and absorption spectra). The chalcogenide glass of GexSe80-xPb20 has been prepared by melt quenching technique. Thin films of GexSe80-xPb20 are deposited by vacuum thermal evaporation technique on highly clean glass substrates and their optical properties such as refractive in...
متن کاملStructural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
متن کاملStructural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2021
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/1762/1/012036